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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1429 DESCRIPTION With TO-3PL package Complement to type 2SD2155 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage IN Collector-emitter voltage Emitter-base voltage ANG CH EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -180 -180 -5 -15 -1.5 UNIT V V V A A W ae ae Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 150 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-8A ;IB=-0.8A IC=-6A ; VCE=-5V VCB=-180V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-1A ; VCE=-5V IE=0;f=1MHz;VCB=-10V 55 30 MIN -180 2SB1429 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -3.0 -1.5 -5 -5 160 |I |I V V A A Collector output capacitance O 80-160 10 MHz pF hFE-1 classifications R 55-10 HAN INC SEM GE OND IC TOR UC 340 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1429 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.50 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1429 SEM GE HAN INC OND IC TOR UC 4 |
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